About SiC



SiC (Silicon Carbide) is a covalent bond compound consisting of a 1:1 ratio of silicon (Si) and carbon (C). This is a compound not found in our natural environment with only small amounts confirmed in meteorites.


SiC is classified as a ceramic with properties that include having a high degree of hardness, oxidation resistant, being chemically stable, and heat resistant. For many years SiC has been used in polishing solutions, flame retardants, and heating elements. More recently, SiC has come to be used in the wafer boats, tubes, and dummy wafers, which serve as an alternative for silicon wafers, used in the semiconductor manufacturing process. SiC is widely used for components in devices subjected to high temperatures.


Beyond its use as equipment component, SiC is also a semiconductor element just like silicon. For many years, there have been expectations for the use of SiC as a next-generation alternative to silicon semiconductor substrates. Since heading into the 21st century, we have seen the beginning of mass production of SiC single crystal wafers as well as the market launch of SiC elements employing these components.
Compared to silicon, SiC has a wider band gap (2-3 times that of silicon) and also demonstrates a high rate of thermal conductivity. There are expectations that SiC will serve as a material for power devices and high frequency devices.

What is so special about SiC

01 Chemically stable

Susceptible to almost no corrosion from commonly used acids, including hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, and fluonitric acid.

*Under specific conditions, SiC is susceptible to corrosion from solutions and molten salt, etc.

02 Oxidation resistant

The surface of SiC is comprised of a silicon dioxide (SiO2) layer that makes it highly resistant to oxidation.

*Exposure to high temperatures in a low oxygen partial pressure environment can
result in the production of silicon monoxide (SiO=gas), which can cause the
corrosion of SiC.

03 Heat Resistant

Displaying superior heat resistance, SiC is stable in high thermal environments. Without a melting point or softening point, SiC is stable up to sublimation, which occurs at a temperature above approximately 2000ºC. (*)

*Varies depending on the environment.

04 Hardness

Under the new Mohs hardness scale, SiC is rated as a 13, which makes it the third hardest element on earth behind diamond (15) and boron carbide (14). However, SiC is known for its difficulty of machining due to its chemical stability and extreme hardness.

SiC produced by ADMAP

High purity

At ADMAP, we manufacture SiC using the CVD (Chemical Vapor Deposition) method.
Types of SiC manufacturing methods include the sintering method, which is the process of compacting and forming powered ceramic materials using heat, the CVD method, which is the process of using gases containing silicon elements and carbon elements, and the sublimation method, which is the process of using high temperatures to turn SiC crystals into gas and then recrystallizing them, as well as other methods. SiC created using the CVD method is characterized by its high density and purity.


At ADMAP, we offer a 3C-structured SiC known as β-SiC. (All SiC other than 3C is classified as α-SiC.)